Finding
SiC device supply is concentrated in five Western and Japanese firms, but China is building a parallel stack from substrate to module and already supplies most of its own IGBTs
STMicroelectronics led SiC power devices in 2023 with 32.6% of revenue, followed by onsemi, Infineon, Wolfspeed and Rohm; the top five held about 92% (TrendForce). In China, BYD Semiconductor, StarPower, CRRC Times Electric and Silan supply most domestic IGBT modules, and Sanan, BASiC and BYD are scaling SiC devices.
Ownership moved fast in 2023-2025. Infineon bought GaN Systems (2023) and Renesas bought Transphorm (2024); Wolfspeed filed for Chapter 11 in June 2025 and emerged in September after restructuring its debt; China's Innoscience, the largest GaN-on-silicon producer by wafer capacity, listed in Hong Kong in December 2024. ST and Sanan run a 200 mm SiC joint venture in Chongqing to serve Chinese automakers locally.
The risk map has three layers. SiC substrates are concentrated in four companies (see SiC and GaN Substrate). Device fabs sit in the US, Europe, Japan and increasingly China. And ordinary discretes can still halt lines: in October 2025 the Dutch government took control of Nexperia and China blocked exports from its Dongguan plant, and automakers warned of shortages within weeks. Tesla, BYD, Toyota/Denso and Hyundai have all moved to design or co-develop power modules in-house to secure supply.
Technology
Device families compared
| Device | Characteristics | Advantages | Constraints | Typical EV use |
|---|---|---|---|---|
| Si IGBT | Bipolar silicon switch, mature | Low cost, rugged, deep supply | Higher losses, limits frequency | 400 V inverters, commercial vehicles |
| SiC MOSFET | Wide bandgap (3.26 eV), high voltage and temperature | Low switching loss, smaller cooling, 800 V capable | Cost, substrate supply | 800 V traction inverters, OBCs, DC fast chargers |
| GaN HEMT | Wide bandgap (3.4 eV), lateral device | Fastest switching, smallest magnetics | 650 V class, limited automotive field data | OBCs, DC-DC, LiDAR drivers |
Vendors
Vendor landscape
| Category | Companies | Notes |
|---|---|---|
| IGBT leaders | Infineon, Mitsubishi Electric, Fuji Electric, onsemi, StarPower, BYD Semiconductor, CRRC Times Electric | Infineon is the largest power semiconductor maker overall |
| SiC devices | STMicroelectronics, onsemi, Infineon, Wolfspeed, Rohm, BYD Semiconductor, Sanan, BASiC | ST led in 2023; Chinese share rising |
| GaN devices | Infineon (GaN Systems), Navitas, EPC, Renesas (Transphorm), TI, Innoscience | Data center and charger demand leads automotive |
| OEM in-house | Tesla, BYD, Toyota/Denso, Hyundai | Module design and packaging brought in-house |
Directory
Power semiconductor makers
Grouped by device family; SiC substrate makers are listed separately because a few of them gate the whole SiC chain.
| Company | Products | HQ | Fabs | Technology | Customers | Status |
|---|---|---|---|---|---|---|
| BYD Semiconductor | IGBT and SiC modules; in-house supply to BYD | China | China | IGBT, SiC | BYD; external Chinese automakers | active |
| CRRC Times Electric | IGBT modules; rail-traction heritage | China | China | IGBT, SiC | Chinese automakers | active |
| Fuji Electric | IGBT modules for xEV inverters | Japan | Japan, Malaysia | IGBT, SiC | Japanese and European Tier 1s | active |
| Infineon | HybridPACK Drive modules, CoolSiC MOSFETs, CoolGaN; GaN Systems acquired 2023 | Germany | Germany, Austria, Malaysia, Hungary | IGBT, SiC, GaN; 200 mm SiC in Kulim, Malaysia | Most global automakers and Tier 1s | active: Largest power semiconductor maker |
| Mitsubishi Electric | J-series IGBT and SiC modules | Japan | Japan | IGBT, SiC; 200 mm SiC fab in Kumamoto | Japanese automakers and Tier 1s | active |
| Silan Microelectronics | IGBT and SiC devices | China | China | IGBT, SiC | Chinese automakers and Tier 1s | active |
| StarPower Semiconductor | IGBT and SiC modules | China | China | IGBT, SiC | Chinese automakers and Tier 1s | active |
| Company | Products | HQ | Fabs | Technology | Customers | Status |
|---|---|---|---|---|---|---|
| BASiC Semiconductor | SiC MOSFETs and automotive modules | China | China | SiC | Chinese automakers | active |
| Bosch | SiC MOSFETs from Reutlingen and Roseville, California | Germany | Germany, US | SiC, 200 mm conversion | Bosch inverters | active |
| onsemi | EliteSiC MOSFETs and modules | US | US, Czech Republic, South Korea | SiC, vertically integrated from boules to modules | Volkswagen Group, Hyundai, BMW, Zeekr | active |
| Rohm (SiCrystal) | SiC MOSFETs and modules; SiCrystal substrates | Japan | Japan, Germany | SiC | Schaeffler (Vitesco), Geely | active |
| Sanan Semiconductor | SiC substrates and devices; partner in the Sanan-ST Chongqing joint venture | China | China | SiC | Chinese automakers; STMicroelectronics | active |
| STMicroelectronics | SiC MOSFETs; Sanan-ST 200 mm SiC joint venture in Chongqing | Switzerland | Italy, France, Singapore, China | SiC; integrated substrate plant in Catania | Tesla, Geely, Renault | active: SiC device leader by revenue |
| Wolfspeed | SiC substrates and MOSFETs; Mohawk Valley 200 mm fab | US | US | SiC | Lucid, ZF, GM | active: Exited Chapter 11, September 2025 |
| Company | Products | HQ | Fabs | Technology | Customers | Status |
|---|---|---|---|---|---|---|
| Coherent | SiC substrates; Denso and Mitsubishi Electric hold minority stakes in the SiC unit | US | US, Sweden, China | SiC substrates | Denso, Mitsubishi Electric | active |
| SICC | Conductive SiC substrates, 150 mm and 200 mm | China | China | SiC substrates | Infineon, Bosch | active |
| TanKeBlue | SiC substrates | China | China | SiC substrates | Infineon | active |
| Company | Products | HQ | Fabs | Technology | Customers | Status |
|---|---|---|---|---|---|---|
| Innoscience | Automotive GaN HEMTs on 200 mm silicon | China | China | GaN | Chinese OBC and LiDAR makers | active |
| Navitas (GeneSiC) | GaNFast ICs and GeneSiC MOSFETs | US | Outsourced (foundries) | GaN, SiC | OBC and DC-DC makers | active: Shifted focus to data-center power in 2025 |
| Renesas (Transphorm) | GaN FETs (Transphorm acquired 2024), IGBTs and gate drivers | Japan | Japan | GaN, IGBT | Japanese automakers and Tier 1s | active |
| Texas Instruments | Integrated GaN FETs and isolated gate drivers | US | US | GaN, gate drivers | OBC and DC-DC makers | active |
| Company | Products | HQ | Fabs | Technology | Customers | Status |
|---|---|---|---|---|---|---|
| Nexperia | Discretes, logic and small MOSFETs used across every ECU | Netherlands | Netherlands, UK, Germany, China, Malaysia, Philippines | Silicon discretes | Most global automakers and Tier 1s | active: Owned by Wingtech (China); control dispute with the Dutch government and Dutch management since October 2025 cut chip supply to automakers |
Sources
Sources and scope
- Scope
- EV Power Semiconductors
- Sources
- TrendForce (SiC power device ranking, 2023); company filings; Reuters (Nexperia, October 2025)
- Updated
- October 2026