EV Power Semiconductors

IGBT · SiC · GaN · chipmakers

Three device families switch every watt in an EV. SiC took the traction inverter; GaN is taking the chargers and converters; IGBTs hold the low-cost end.

Where each device fits by switching frequency and voltage, on a log frequency axis from 1 kHz to 10 MHz: silicon IGBTs from about 2 to 30 kHz at 600 to 6,500 V; SiC MOSFETs from about 10 to 500 kHz at 650 to 3,300 V; GaN HEMTs from about 100 kHz to 8 MHz at 40 to 650 V. Traction inverters run near 10 to 20 kHz; onboard chargers and DC-DC converters push higher, where GaN wins. WHERE EACH DEVICE FITS: SWITCHING FREQUENCY AND VOLTAGE 1 kHz 10 kHz 100 kHz 1 MHz 10 MHz Si IGBT600-6,500 V SiC MOSFET650-3,300 V GaN HEMT40-650 V Traction inverters run near 10-20 kHz; OBCs and DC-DC push higher, where GaN wins.
SiC leader
STMicroelectronics
Top five SiC share
~92%
GaN rating
650 V class
Companies tracked
22, 9 Chinese
Hub
Supply Chain

Finding

SiC device supply is concentrated in five Western and Japanese firms, but China is building a parallel stack from substrate to module and already supplies most of its own IGBTs

STMicroelectronics led SiC power devices in 2023 with 32.6% of revenue, followed by onsemi, Infineon, Wolfspeed and Rohm; the top five held about 92% (TrendForce). In China, BYD Semiconductor, StarPower, CRRC Times Electric and Silan supply most domestic IGBT modules, and Sanan, BASiC and BYD are scaling SiC devices.

Ownership moved fast in 2023-2025. Infineon bought GaN Systems (2023) and Renesas bought Transphorm (2024); Wolfspeed filed for Chapter 11 in June 2025 and emerged in September after restructuring its debt; China's Innoscience, the largest GaN-on-silicon producer by wafer capacity, listed in Hong Kong in December 2024. ST and Sanan run a 200 mm SiC joint venture in Chongqing to serve Chinese automakers locally.

The risk map has three layers. SiC substrates are concentrated in four companies (see SiC and GaN Substrate). Device fabs sit in the US, Europe, Japan and increasingly China. And ordinary discretes can still halt lines: in October 2025 the Dutch government took control of Nexperia and China blocked exports from its Dongguan plant, and automakers warned of shortages within weeks. Tesla, BYD, Toyota/Denso and Hyundai have all moved to design or co-develop power modules in-house to secure supply.

Technology

Device families compared

EV power semiconductor technologies
DeviceCharacteristicsAdvantagesConstraintsTypical EV use
Si IGBTBipolar silicon switch, matureLow cost, rugged, deep supplyHigher losses, limits frequency400 V inverters, commercial vehicles
SiC MOSFETWide bandgap (3.26 eV), high voltage and temperatureLow switching loss, smaller cooling, 800 V capableCost, substrate supply800 V traction inverters, OBCs, DC fast chargers
GaN HEMTWide bandgap (3.4 eV), lateral deviceFastest switching, smallest magnetics650 V class, limited automotive field dataOBCs, DC-DC, LiDAR drivers

Vendors

Vendor landscape

EV power semiconductor suppliers
CategoryCompaniesNotes
IGBT leadersInfineon, Mitsubishi Electric, Fuji Electric, onsemi, StarPower, BYD Semiconductor, CRRC Times ElectricInfineon is the largest power semiconductor maker overall
SiC devicesSTMicroelectronics, onsemi, Infineon, Wolfspeed, Rohm, BYD Semiconductor, Sanan, BASiCST led in 2023; Chinese share rising
GaN devicesInfineon (GaN Systems), Navitas, EPC, Renesas (Transphorm), TI, InnoscienceData center and charger demand leads automotive
OEM in-houseTesla, BYD, Toyota/Denso, HyundaiModule design and packaging brought in-house

Directory

Power semiconductor makers

Grouped by device family; SiC substrate makers are listed separately because a few of them gate the whole SiC chain.

IGBT makers
CompanyProductsHQFabsTechnologyCustomersStatus
BYD SemiconductorIGBT and SiC modules; in-house supply to BYDChinaChinaIGBT, SiCBYD; external Chinese automakersactive
CRRC Times ElectricIGBT modules; rail-traction heritageChinaChinaIGBT, SiCChinese automakersactive
Fuji ElectricIGBT modules for xEV invertersJapanJapan, MalaysiaIGBT, SiCJapanese and European Tier 1sactive
InfineonHybridPACK Drive modules, CoolSiC MOSFETs, CoolGaN; GaN Systems acquired 2023GermanyGermany, Austria, Malaysia, HungaryIGBT, SiC, GaN; 200 mm SiC in Kulim, MalaysiaMost global automakers and Tier 1sactive: Largest power semiconductor maker
Mitsubishi ElectricJ-series IGBT and SiC modulesJapanJapanIGBT, SiC; 200 mm SiC fab in KumamotoJapanese automakers and Tier 1sactive
Silan MicroelectronicsIGBT and SiC devicesChinaChinaIGBT, SiCChinese automakers and Tier 1sactive
StarPower SemiconductorIGBT and SiC modulesChinaChinaIGBT, SiCChinese automakers and Tier 1sactive
SiC device makers
CompanyProductsHQFabsTechnologyCustomersStatus
BASiC SemiconductorSiC MOSFETs and automotive modulesChinaChinaSiCChinese automakersactive
BoschSiC MOSFETs from Reutlingen and Roseville, CaliforniaGermanyGermany, USSiC, 200 mm conversionBosch invertersactive
onsemiEliteSiC MOSFETs and modulesUSUS, Czech Republic, South KoreaSiC, vertically integrated from boules to modulesVolkswagen Group, Hyundai, BMW, Zeekractive
Rohm (SiCrystal)SiC MOSFETs and modules; SiCrystal substratesJapanJapan, GermanySiCSchaeffler (Vitesco), Geelyactive
Sanan SemiconductorSiC substrates and devices; partner in the Sanan-ST Chongqing joint ventureChinaChinaSiCChinese automakers; STMicroelectronicsactive
STMicroelectronicsSiC MOSFETs; Sanan-ST 200 mm SiC joint venture in ChongqingSwitzerlandItaly, France, Singapore, ChinaSiC; integrated substrate plant in CataniaTesla, Geely, Renaultactive: SiC device leader by revenue
WolfspeedSiC substrates and MOSFETs; Mohawk Valley 200 mm fabUSUSSiCLucid, ZF, GMactive: Exited Chapter 11, September 2025
SiC substrate makers
CompanyProductsHQFabsTechnologyCustomersStatus
CoherentSiC substrates; Denso and Mitsubishi Electric hold minority stakes in the SiC unitUSUS, Sweden, ChinaSiC substratesDenso, Mitsubishi Electricactive
SICCConductive SiC substrates, 150 mm and 200 mmChinaChinaSiC substratesInfineon, Boschactive
TanKeBlueSiC substratesChinaChinaSiC substratesInfineonactive
GaN device makers
CompanyProductsHQFabsTechnologyCustomersStatus
InnoscienceAutomotive GaN HEMTs on 200 mm siliconChinaChinaGaNChinese OBC and LiDAR makersactive
Navitas (GeneSiC)GaNFast ICs and GeneSiC MOSFETsUSOutsourced (foundries)GaN, SiCOBC and DC-DC makersactive: Shifted focus to data-center power in 2025
Renesas (Transphorm)GaN FETs (Transphorm acquired 2024), IGBTs and gate driversJapanJapanGaN, IGBTJapanese automakers and Tier 1sactive
Texas InstrumentsIntegrated GaN FETs and isolated gate driversUSUSGaN, gate driversOBC and DC-DC makersactive
Discretes and logic
CompanyProductsHQFabsTechnologyCustomersStatus
NexperiaDiscretes, logic and small MOSFETs used across every ECUNetherlandsNetherlands, UK, Germany, China, Malaysia, PhilippinesSilicon discretesMost global automakers and Tier 1sactive: Owned by Wingtech (China); control dispute with the Dutch government and Dutch management since October 2025 cut chip supply to automakers

Sources

Sources and scope

Scope
EV Power Semiconductors
Sources
TrendForce (SiC power device ranking, 2023); company filings; Reuters (Nexperia, October 2025)
Updated
October 2026